Facilities

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May, 1995

2 reports at the Georgian Symposium for Project Development and Conversion (ISTC), Tbilisi, Georgia

September, 1995

Report at the 5th International Symposium on Recent Advances in Microwave Technology (ISRAMT'95), Kiev, Ukraine

May, 1996

Report at the 3rd International Workshop EXMATEC'96, Freiburg, Germany

September, 1997

2 reports at the American-Georgian Workshop, Tbilisi, Georgia (sponsored by the National Academy of Sciences, USA)

October, 1997

Presentation at the Colloquium of Institute fur Halbleiter technik and Electron Devices Society German Chapter, Aachen, Germany

February, 1999

Trip of 2 specialists to the USA (arranged by the US Department of State and CRDF); presentations and meetings in 9 organizations (institutions of higher education, private companies, Department of State, CRDF)

July, 1999

Participation in 1999 IEEE and IV Region 8 Chapters Meetings (Brussels, Belgium)

October, 1999

Invited paper at the 1999 IEEE Gallium Arsenide Integrated Circuit Symposium, Monterey, C; presentations in Kopin Corporation, Tounton MA and Rensselear Polytechnic Institute NY, USA (sponsored by ISTC and CRDF)

May, 2000

Report at the 7th International Workshop EXMATEC'00, Heraklion, Greece

October, 2000

Participation in 2000 IEEE and IV Region 8 Chapters Meeting-2000 (Paris, France)

March, 2001

Participation in Intellectual Property and Licensing Workshop under NATO SfP Programme. Moscow, Russia

September, 2001

Participation in the IPR Protection and Related Business Opportunities Seminar (Tbilisi, Georgia)

May, 2002

Participation in the NATO Conference "Integration of S&T Systems of the Central Asian Republics to the Western World (Ankara, Turkey)"

October, 2003

Participation in International Conference "Micro-and Nanoelectronics-2003" Moscow-Zvenigorod, Russia.

May, 2004

Participation in the 5th International Scientific-Practical Conference "Modern Information and Electronic Technologies", Odessa 2004.

June 2004

Participation in International Conference Measuring Microsystems for Environment Monitoring, Tbilisi, Georgia.

April, 2006

Fraunhofer – ISTC Workshop on Sensor Technologies “Advanced Sensor Technologies for Life Sciences and Safety”, Waldheim, Germany

September, 2006

XIIIth international Seminar/Workshop “A novel concept of a homodyne microwave sensor performance, Tbilisi, Georgia.

February, 2009

2nd International Workshop on Plasma Etch and Strip in Microelectronics, Leaven, Belgium

June, 2011

8 infoDev’s 4th Global Forum “Innovation & Technology Entrepreneurship”. Helsinki, Finland. .

March, 2011

International Scientific Conference. “Modern Issues of Applied Physics”, Tbilisi, Georgia

March, 2014

NATO International Conference, "Tbilisi-Spring-2014", Tbilisi, Georgia .

1995,2000,2003,2008,2009

8 Training of 5 specialists in the field of design and technology in the leading institutes of Germany, Greece and USA

IEEE Membership - 2 members .

 

 

LIST OF MAIN PUBLICATIONS SINCE 1995


  1. N.P.Khuchua, Z.D.Chakhnakia, L.V.Khvedelidze. "GaAs Integrated Circuit Technology and Prospects for its Development: Proceedings of Georgian Symposium for Project Development and Conversion", May 15-18, Tbilisi, 1995, pp.87-90.

2. R.G.Melkadze, N.P.Khuchua, Z.D.Chakhnakia. "Pseudomorphic III-V Compounds - New Materials for Microelectronics. Proceedings of Georgian Symposium for Project Development and Conversion", May 15-18, Tbilisi, 1995, pp.203-206.

3. Z.D.Chakhnakia, G.P.Didebashvili, R.G.Melkadze, N.P.Khuchua. "Ultrahigh-Speed HEMT Divider".Pros. 5th International Symposium on Recent-Advances in Microwave Technology", September. 11-16, 1995, Kiev, pp.333-336.

4. N.P.Khuchua, L.V.Khvedelidze. "Studies of Sidegating Effect Mechanisms in GaAs MESFET's". Abstracts of the Third International Workshop on EXMATEC'96, May 12-15,Freiburg, Germany.

5. A.A.Tutunjan, M.V.Ksaverieva, N.M.Lezheneva. Development of Semiconductor Structures for Low-Temperature Switches, "Elektronnaya promishlennost" M.1996, 2, p33-35.

6. L.Krivospitskii, A.Tutunjan, G.Kalandadze. A Method of Formation of Submicron Metallization (In Russian). "Elektronnaya promishlennost", v.2, 1966, pp.35-38.

7. A.A.Tutunjan, N.P.Khuchua, M.V.Ksaverieva. Investigation of Germanium Doped by a Multicharged Au and Sl Impurities, "Elektronnaya promishlennost", M.1996, 2, p.38-40.

8. M.D.Giashvili, T.I.Pavliashvili, N.A.Tutunjan, L.V.Khvedelidze. Application of Polyimide Films in the Production Process of Gallium Arsenide Integrated Circuits. Georgian Engineering News, N.4, 1997, pp.119-120.

9. N.P.Khuchua. "Development of Integrated Curcuits and Semiconductor Devices on GaAs and Related Compounds in Georgia". KI Interface, N1, 1997, pp.7-10.

10. N.P.Khuchua, A.B.Gerasimov, R.F,Chikovani, Z.D.Chakhnakia, L.V.Khvedelidze, R.G.Melkadze, A.P.Bibilashvili, T.D.Mkheidze, G.I.Goderdzishvili. Status and Roadmap of GaAs Technology in Georgia, Former Soviet Union. GaAs IC symposium 21st Annual Technical Digest,1999,pp.33-36.

11. Z.Tchakhnakia, I.Sikmashvili, G.Didebashvili, R.Melkadze. Design of high-speed gates based on heterostructural technology. Proceedings 2-nd International Conference on Microelectronics (MIEL’2000), Proceedings of the Conference MIEL’2000. Nis, Yugoslavia, May, 2000, p 117-120.

12. R.Melkadze, N.Khuchua, Z.Tchakhnakia, T.Makalatia, G.Didebashvili, G.Peradze, T.Khelashvili, M.Ksaverieva. Investigation of MBE grown GaAs/AlGaAs/InGaAs heterostructures. Materials Science and Engineering B80, 262-265, 2001.

13. N.P.Khuchua, L.V.Khvedelidze, N.B.Gorev, E.N.Privalov, M.S.Shur. Determination of deep trap concentration at channel-substrate interface in GaAs MESFET using sidegating measurements. Solid-State Electronics, vol.46, N.9, pp.1463-1466, 2002.

14. N.B.Gorev, I.Kodzhespirova, E.N.Privalov, L.Khvedelidze, N.Khuchua, G.G.Peradze, M.S.Shur, K.Stevens. Non-destructive deep trap diagnostics of epitaxial structures. Solid-State Electronics, v.47, 1569-1575, 2003.

15. N.P.Khuchua, L.V.Khvedelidze, M.G.Tigishvili, N.B.Gorev, E.N.Privalov, I.F.Kodzhespirova. Deep-level effects in GaAs Microelectronics: A Review. Microelectronics, v.32, N5, pp.257-274, 2003.

16. N.B.Gorev, I.F.Kodzhespirova, E.N.Privalov, N.P.Khuchua, L.V.Khvedelidze, M.G.Tigishvili. The substrate non-uniformity effect on the sidegating threshold voltage in GaAs integrated circuits. 2003 13th International Crimean Conference “Microwave & Telecommunication Technology“ Crimea, Ukraine, Conference Proceedings, 2003, pp.580-581.

17. N.P.Khuchua, Z.D.Chakhnakia, L.V.Khvedelidze, R.G.Melkadze, A.A.Tutunjan, C.D.Kalandadze, N.A.Tutunjan, R.Diehl. Elaboration of gallium arsenide technology in Georgia for development of microelectronic devices. Proceedings of International Conference on Micro-and Nanoelectronics, 6-10 October, 2003, Moscow, v.5401, pp.344-353.

18. Z.Chakhnakia, L.Khvedelidze, N.Khuchua, R.Melkadze, G.Peradze, T.Sakharova, Z.Hatzopoulos. AlGaAs-GaAs heterostructure ?-doped field-effect transistor (?-FET). Proceedings of International Conference on Micro-and Nanoelectronics 2003, Moscow, v.5401, pp.354-361.

19. N.B.Gorev, I.F.Kodzhespirova, E.N.Privalov, N.Khuchua, L.Khvedelidze, M.Shur. Photocapacitance of GaAs thin-film structures. Solid-State Electronics. 2005, v.49, pp.343-349.

20. L.V.Khvedelidze, N.P.Khuchua, N.G.Kobrava, T.M.Lezhneva, R.G.Melkadze, L.G.Natsvlishvili, G.G.Peradze, T.B.Sakharova, L.P.Sanikidze, A.Berthold, I.Besse. Gallium arsenide technology possibilities for radiation detection. Georgian Engineering News, No.3, 2004, pp.7-15.

21. N.B.Gorev, I.F.Kodzhespirova, E.N.Privalov, N.Khuchua, L.Khvedelidze, M.S.Shur. Photocapacitance of GaAs thin-film epitaxial structures fabricated on a semi-insulating compensated substrate. Int.Journ. of High Speed Electronics and Systems, 2004, v.14, No.3, pp.775-784.

22. N.B.Gorev, I.F.Kodzhespirova, E.N.Privalov, N.Khuchua, L.Khvedelidze, M.Shur. Photocapacitance of GaAs thin-film structures. Solid-State Electronics. 2005, v.49, pp.343-349.

23. L.V.Khvedelidze, N.P.Khuchua, N.G.Kobrava, T.M.Lezhneva, R.G.Melkadze, L.G.Natsvlishvili, G.G.Peradze, T.B.Sakharova, L.P.Sanikidze, A.Berthold, I.Besse. Gallium arsenide technology possibilities for radiation detection. Georgian Engineering News, No.3, 2004, pp.7-15.

24. N.B.Gorev, I.F.Kodzhespirova, E.N.Privalov, N.Khuchua, L.Khvedelidze, M.S.Shur. Photocapacitance of GaAs thin-film epitaxial structures fabricated on a semi-insulating compensated substrate. Int.Journ. of High Speed Electronics and Systems, 2004, v.14, No.3, pp.775-784.

25. N.Khuchua, Z.Chakhnakia, N.Kobrava, R.Melkadze, T.Lezhneva, T.Sakharova, M.Tigishvili, A.Tutunjan, N.Tutunjan, R.Diehl, P.Tsenes, Z.Hatzopoulos. Availability of enabling technologies for GaAs-based specific applications. The 12th European Gallium Arsenide & Other Compound Semiconductor Application Symposium GAAS2004 Amsterdam, Conference Proceedings, 179-181.

26. N. A. Tutunjyan, T.V. Sakharova, I.E.Ribalko, and A.A. Tutunjyan. Formation of Via-Holes Through The Gallium Arsenide Wafer in fabrication of Monolithic Microwave Integrated Circuits. Georgian Engineering News, N1, 2005, pp. 54-58.

27. N. Khuchua, A.Moseshvili, R.Melkadze, G.Peradze. “Prospects for GaAs Solar Cells with a New Type Concentrator “ 20th European Photovoltaic Solar Energy Conference and Exhibition Barcelona, Spain 6 - 10 June 2005, pp.341-343.

28. Michael Kroening, Igor Besse, Tilo Baumbach, Axel Berthold, R.G. Melkadze, T.M. Lezhneva, L.V.Khvedelidze, G.D. Kalandadze, “Materials investigation of Gallium Arsenide for direct converting energy sensitive X-ray detectors”, 10th SPIE International Symposium Nondestructive Evalution Health Monitoging and Diagnostics, 6-10 March 2005, Town and Country Resort & Conversion Center, San Diego, California USA.

29. M. Tigishvili, N. Gapishvili, T. Lezhneva, R. Melkadze, L. Khvedelidze “Local Modification of the Properties of GaAs and its Ternary Compounds by the Ion Implantation Method”, Georgian Materials News, 2006, pp. 20-25.

30. N. Gorev, I. Kodzhespirova, E. Privalov, N. Khuchua, L. Khvedelidze, M. Shur “Photocapacitance of Selectively Doped AlGaAs/GaAs Heterustructures Containing Doped Traps”, Int. Jour. of High Speed El. and Systems, v.17, No. 1, 2007, pp. 1889-192.

31. Z. Machavaraiani, B. Kvitia, Z. Chakhnakia, N. Khuchua “A novel concept of a homodyne microwave sensor performance”, Proceedings of XIIIth international Seminar/Workshop, Tbilisi (Georgia), 2008, pp.106-110.

32. Z. Chakhnakia, G. Didebashvili, B. Kvitia, N. Khuchua, Ch. Sklarczyk, V. Melev “Microwave sensors tool or nondestructive diagnostics, Georgian Engineering News, No. 2, 2008, pp. 97-101.

33. N.Tutunjyan, N.Khuchua, T.Sakharova, G.Kalandadze, T.Pavliashvili.”Application of Plasma Etch Processes to Gallium Arsenide Technology”, Proceedings of Plasma Etch and Strip in Microelectronics 2nd International Workshop 2009, Leuven, Belgium

33. N.Tutunjyan, N.Khuchua, T.Sakharova, G.Kalandadze, T.Pavliashvili.”Application of Plasma Etch Processes to Gallium Arsenide Technology”, Proceedings of Plasma Etch and Strip in Microelectronics 2nd International Workshop 2009, Leuven, Belgium

34. N.Khuchua, M.Shur.,Z.Chakhnakia, R.Melkadze, A.Tutunjyan, L.Khvedelidze, T.Sakharova, G.Didebashvili. “Monolithically integrated Shottky-Gann GaAs based circuits for THz applications”, Georgian Engineering News, 2010, No.3, pp.59-65.

35. N.Khuchua, M.Shur, Z.Chakhnakia, R.Melkadze, T.Sakharova, L.Imnaishvili. “III-V Semiconductor Devices to Bridge the Terahertz Technology GaP”. Proceedings of International Scientific Conference. “Modern Issues of Applied Physics”, Tbilisi, March 2011. Proceedings of International Scientific Conference. “Modern Issues of Applied Physics”, Tbilisi, March, 2011, pp.282-285.

36. M.G.Tigishvili,R.G.Gapishvili, R.G.Guliaev, Z.V. Jibuti, N.D. Dolidze, N.P. Khuchua, R.G. Melkadze. Defect engineering in the silicon p-n junction technology. Georgian Engineering News,No.4 (vol.68), 2013, pp.75-79.

37. N. P.Khuchua, Z.D.Chakhnakia, R. G.Melkadze, A. D.Wieck, D.Reuter, M. S.Ksaverieva,T.B.Sakharova, Albert A.Tutunjyan. Characteristics of double delta-doped AlGaAs/InGaAs/GaAs Pseudomorphic HEMT. Georgian Engineering News, No.1(vol.69), 2013, pp.5-15.

38. Nina P. Khuchua, Nugzar D. Dolidze, Nodar G. Gapishvili, Revaz G. Gulyaev, Zurab V. Jibuti, Revaz G. Melkadze, Marina G. Tigishvili. Technology of semiconductor materials sensitive to different regions of electromagnetic radiation spectrum. Proceedings of International Conference "Tbilisi-Spring-2014",Nuclear Radiation Nanosensors and Nanosensory Systems, pp.58-60.

39. Kalandadze G.D., Ksaverieva M.V., Sanikidze K.G., Sakharova T.B., Tutunjyan A.A. Peculiarities of the formation of ohmic contacts in the technology of production of gallium arsenide semiconductor devices and integrated circuits.Georgian Engineering News, No.4(vol.68), pp.80-85,2013

40. Kalandadze G.D., Mikirtichyan A.L., Pavliashvili T.I., Sanikidze L.P., Sakharova T.B., Tutunjyan A.A.Dielectric coatings in the technology of semiconductor devices and integrated circuits on epitaxial gallium arsenide structures.Dielectric coatings in the technology of semiconductor devices and integrated circuits on epitaxial gallium arsenide structures.Georgian Engineering News, No.4(vol. 68), pp.68-74,2013

41. Nina P. Khuchua, Nugzar D. Dolidze, Nodar G. Gapishvili, Revaz G. Gulyaev, Zurab V. Jibuti, Revaz G. Melkadze, Marina G. Tigishvili. Technology of semiconductor materials sensitive to different regions of electromagnetic radiation spectrum. Nanotechnology Perceptions, 2014, to be published
 

Tbilisi State University, 13, Chavchavadze ave., 0179, Tbilisi, Georgia, Tel./Fax: (995 32) 222 06 26.
E-mail: ninakhuchua@mail.ru
Last modified: 01/07/2014.       Site is sponsored by  STCU .